SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative strategies for memory and storage technology aimed at boosting artificial intelligence infrastructure performance. The company shared its plans at the 2026 OCP Global Summit in San Jose, California, from October 12 to 15. Its roadmap emphasizes high-performance memory, expanding memory through Compute Express Link, and next-generation solid-state drives. Additionally, Samsung will collaborate with AMD for a joint CXL demonstration. These initiatives are designed to address current AI server capacity limitations.
Samsung outlined its approach through three primary objectives: increasing speed, enhancing memory scalability, and ensuring data persistence. To improve speed, the company showcased customized high-bandwidth memory alongside the eighth-generation HBM5 technology. For scalability, Samsung promoted CXL as a solution to augment memory capacity beyond what is built into each server. In terms of data persistence, the company introduced next-generation SSD-based storage and data management solutions. It also presented storage software designed to optimize data processing efficiency in AI applications.
According to Samsung, the rising deployment of AI agents is increasing the demand for more memory during inference. Larger models produce more data when generating responses, and this data must remain accessible to processors. Traditional systems restrict the amount of memory a processor can utilize. Samsung demonstrated CXL technology as a practical means of overcoming this barrier. The company also highlighted key-value cache optimization, which allows AI models to reuse previously processed data instead of redoing the same computations.
Partnership with AMD Extends to CXL Memory Expansion
Samsung and AMD will jointly showcase a CXL-based solution that expands memory capacity within AI systems. This technology enables processors to share memory resources rather than relying solely on local server memory. Samsung confirmed that engineers have tested the solution in real system environments. The demonstration builds on a memorandum of understanding signed in March 2026 between the two companies for next-generation AI memory and computing. On October 7, AMD CEO Lisa Su visited Korea and met Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was another highlight of Samsung’s exhibit. The company presented CMM-D, a CXL-based DRAM module that connects multiple memory units into a shared pool. Systems can allocate capacity from this pool as needed for different workloads. Samsung also displayed processing-in-memory technology, which performs certain calculations inside memory chips to reduce data movement and conserve energy. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early Co-Design Initiatives Shape Samsung’s AI Memory Strategy
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, detailed the company’s plans during an executive session. He emphasized that the growth of larger AI models and increased inference workloads make higher memory capacity and bandwidth critical for optimal system performance. Shim also noted that Samsung is expanding its co-design and technical validation collaborations with global partners from the earliest stages of development. The goal is to align its memory and storage offerings more closely with customer system designs.
Samsung MAX Lab provides clients with a space to test memory and storage solutions under real-world AI workloads. The lab also facilitates co-design tailored to specific system configurations. Customers can evaluate pre-commercial technologies, including PIM and next-generation SSDs, before they are commercially available. Samsung participated in the summit as a Diamond Sponsor. This event follows its 2026 appearances at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as the company continues to expand its presence in AI memory innovation.